jiangsu changjiang electronics technology co., ltd sot-89 -3l plastic-encapsulate transistors 2SB766A transistor(pnp) features z large collector power dissipation p c z complementary to 2sd874a maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current -continuous -1 a p c collector power dissipation 500 mw t j junction temperature 150 t stg storage temperature -55 ~ 150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=-10 a,i e =0 -60 v collector-emitter breakdown voltage v (br)ceo ic=-2ma,i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-10 a,i c =0 -5 v collector cut-off current i cbo v cb =-20v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-4v,i c =0 -0.1 a h fe(1) v ce =-10v,i c =-500ma 85 340 dc current gain h fe(2) v ce =-5v,i c =-1a 50 collector-emitter saturation voltage v ce(sat) i c =-500ma,i b =-50ma -0.2 -0.4 v base-emitter saturation voltage v be(sat) i c =-500ma,i b =-50ma -0.85 -1.2 v transition frequency f t v ce =-10v,i c =-50ma,f=200mhz 200 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 20 30 pf classification of h fe(1) rank q r s range 85-170 120-240 170-340 making bq br bs sot-89 -3l 1. base 2. collector 3. emitter 1 2 3 www.cj-elec.com 1 c , oct ,2015
-200 -400 -600 -800 -1000 -0 -200 -400 -600 -800 -1000 -0.1 -1 -10 1 10 100 1000 -0 -20 -40 -60 -80 -100 0 50 100 150 200 250 300 -10 -100 -1000 10 100 1000 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 -1 -10 -100 -1000 -200 -400 -600 -800 -1000 -1 -10 -100 -1000 -0 -100 -200 -300 -400 -0 -2 -4 -6 -8 -10 -12 -14 -0 -200 -400 -600 -800 -1000 -1200 v ce =-10v t a =25 t a =100 o c base-emitter voltage v be (mv) collector current i c (ma) i c ?? v be -20 f=1mhz i e =0 / i c =0 t a =25 o c reverse voltage v (v) capacitance c (pf) v cb / v eb c ob / c ib ?? c ib c ob transition frequency f t (mhz) collector current i c (ma) v ce =-10v t a =25 o c i c f t ?? v ce = -10v t a =100 o c t a =25 o c collector current i c (ma) dc current gain h fe i c h fe ?? collector power dissipation p c (w) ambient temperature t a ( ) p c ?? t a collector current i c (ma) base-emitter saturation voltage v besat (mv) t a =25 t a =100 =10 i c v besat ?? t a =25 t a =100 =10 v cesat ?? i c collector-emitter saturation voltage v cesat (mv) collector current i c (ma) common emitter t a =25 -5ma -4.5ma -4ma -3.5ma -3ma -2.5ma -2ma -1.5ma -1ma i b =-0.5ma collector-emitter voltage v ce (v) collector current i c (ma) static characteristic typical characteristics www.cj-elec.com 2 c , oct ,2015
min m a x min m a x a 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 d 4.400 4.600 0.173 0.181 d1 e 2.300 2.600 0.091 0.102 e1 3.940 4.250 0.155 0.167 e e1 l 0.900 1.200 0.035 0.047 symbol dimensions in millimeters dimensions in inches 1.550 ref. 0.061 ref. 1.500 typ. 0.060 typ. 3.000 typ. 0.118 typ. 6 2 7 / 3 d f n d j h 2 x w o l q h ' l p h q v l r q v 6 2 7 / 6 x j j h v w h g 3 d g / d \ r x w www.cj-elec.com 1 c , oct ,2015
6 2 7 / 7 d s h d q g 5 h h o www.cj-elec.com 4 c , oct ,2015
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